A bias voltage dependence of trapped hole annealing and its measurement techniqueKUBOYAMA, S; GOKA, T; TAMURA, T et al.IEEE transactions on nuclear science. 1991, Vol 38, Num 6, pp 1140-1144, issn 0018-9499, 1Conference Paper

Instabilitäten und Durchbruch von Polycid-SiO₂-Si-Strukturen = Instability, breakdown, polysilicium, silicide MOS capacityMARKGRAF, W; HOFMANN, H.-P; BEYER, A et al.Wissenschaftliche Zeitschrift der Technischen Universität Karl-Marx-Stadt. 1989, Vol 31, Num 4, pp 585-594, issn 0863-0615, 10 p.Article

Temperature dependent analysis of the pulsed MOS capacitor for semiconductor material characterizationRADZIMSKI, Z; GAYLORD, E; HONEYCUTT, J et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 10, pp 2597-2601, issn 0013-4651Article

Effect of low pressure corona discharge on MOS characteristicsILA PRASAD; SRIVASTAVA, R. S.Indian journal of pure & applied physics. 1990, Vol 28, Num 5, pp 284-286, issn 0019-5596Article

Roles of corners in matching of linear MOS capacitorsRAJINDER SINGH; BHATTACHARYYA, A. B.IEEE transactions on circuits and systems. 1989, Vol 36, Num 3, pp 467-469, issn 0098-4094, 3 p.Article

A new measurement technique for MOS capacitorsIL-SONG HAN.IEEE transactions on instrumentation and measurement. 1985, Vol 34, Num 4, issn 0018-9456, 682Article

Postmetallisation annealing of aluminium-silicon gate mose capacitorsMCGILLIVRAY, I; ROBERTSON, J. M; WALTON, A. J et al.Electronics Letters. 1985, Vol 21, Num 21, pp 973-974, issn 0013-5194Article

Dielectric characteristics of fluorinated ultradry SiO₂NISHIOKA, Y; OHJI, Y; MUKAI, K et al.Applied physics letters. 1989, Vol 54, Num 12, pp 1127-1129, issn 0003-6951, 3 p.Article

Matching properties of linear MOS capacitorsRAJINDER SINGH; BHATTACHARYYA, A. B.IEEE transactions on circuits and systems. 1989, Vol 36, Num 3, pp 465-467, issn 0098-4094, 3 p.Article

A comparison of MOS inversion layer charge and capacitance formulasBREWS, J. R.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 2, pp 182-187, issn 0018-9383Article

FIXED CHARGE IN CR-METALLIZED MOS CAPACITORS. = CHARGE FIXEE DANS DES CONDENSATEURS MOS METALLISES AVEC CRLEWICKI G.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 4; PP. 1552-1559; BIBL. 12 REF.Article

EXPERIMENTAL OBSERVATIONS OF THE EFFECTS OF OXIDE CHARGE INHOMOGENEITY ON FAST SURFACE STATE DENSITY FROM HIGH-FREQUENCY MOS CAPACITANCE-VOLTAGE CHARACTERISTICS.MCNUTT MJ; SAH CT.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 7; PP. 378-380; BIBL. 9 REF.Article

STABILITY OF MOS CAPACITORS PREPARED FROM OXIDE GROWN IN O₂-HCL GAS.RAI BP; SINGH K; SRIVASTAVA RS et al.1975; J. PHYS. E; G.B.; DA. 1975; VOL. 8; NO 8; PP. 628-629; BIBL. 6 REF.Article

INFLUENCE DES PROCESSUS TUNNEL DE GENERATION SUR LA RELAXATION DE LA CAPACITE DES STRUCTURES MDSV'YUKOV LA; SURIS RA.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 10; PP. 1768-1773; BIBL. 11 REF.Article

EXACT CAPACITANCE OF A LOSSLESS MOS CAPACITOR.MCNUTT MJ; SAH CT.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 3; PP. 255-257; BIBL. 14 REF.Article

HYDROGEN-SENSITIVE PALLADIUM GATE MOS CAPACITORS.STEELE MC; HILE JW; MACLVER BA et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 6; PP. 2537-2538; BIBL. 4 REF.Article

In depth generation lifetime profiling of heat-treated Czochralski siliconBRAUNIG, D; YANG, K. H; TAN, T. Y et al.Physica status solidi. A. Applied research. 1985, Vol 92, Num 1, pp 327-335, issn 0031-8965Article

Effect of semiconductor thickness on capacitance-voltage characteristics of an MOS capacitorNAGAI, K; HAYASHI, Y.Japanese journal of applied physics. 1984, Vol 23, Num 12, pp 1659-1660, issn 0021-4922Article

Thin polyoxide on the top of poly-Si gate to suppress boron penetration for pMOSYUNG HAO LIN; CHUNG CHEN LEE; TAN FU LEI et al.IEEE electron device letters. 1995, Vol 16, Num 5, pp 164-165, issn 0741-3106Article

Characterization of leakage currents in long-lifetime capacitorsOUALID, J; AMMAR BOUHDADA.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 9, pp 1366-1370, issn 0018-9383Article

Realisierung der Kondensatoren in integrierten SCOV-Schaltungen = Réalisation des condensateurs dans les circuits intégrés VLSI = Realization of condensers in VLSI integrated circuitsKRAUSS, M.Wissenschaftliche Zeitschrift der Technischen Universität Dresden. 1985, Vol 34, Num 4, pp 131-138, issn 0043-6925Article

Effect of pre-annealing in preventing gate oxide breakdown voltage degradation induced by polysilicon gate dilineation using ion millingYAMAUCHI, N; YACHI, T; WADA, T et al.Japanese journal of applied physics. 1983, Vol 22, Num 8, pp 539-540, issn 0021-4922Article

EFFECT OF LIFETIME ON SOS CAPACITANCE MEASUREMENTSHAMMER S; FARRINGTON D; LEVIS M et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 7; PP. 187-189; BIBL. 3 REF.Article

COMPARISON OF INTERFACE-STATE GENERATION BY 25-KEV ELECTRON BEAM IRRADIATION IN P-TYPE AND N-TYPE MOS CAPACITORS.MA TP; SCOGGAN G; LEONE R et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 2; PP. 61-63; BIBL. 11 REF.Article

MINORITY-CARRIER INJECTION AND TRANSIENT RESPONSE OF A MOS CAPACITOR.WHELAN MV.1975; PHILIPS RES. REP.; NETHERL.; DA. 1975; VOL. 30; NO 4; PP. 262-264; BIBL. 3 REF.Article